Structural effect on controllable resistive memory switching in donor-acceptor polymer systems
Identifieur interne : 000038 ( Main/Repository ); précédent : 000037; suivant : 000039Structural effect on controllable resistive memory switching in donor-acceptor polymer systems
Auteurs : RBID : Pascal:14-0045746Descripteurs français
- Pascal (Inist)
- Transition conductivité électrique, Commutation électrique, Conductivité électrique, Caractéristique électrique, Effet mémoire, Addition étain, Couche ITO, Structure sandwich, Centre donneur, Centre accepteur, Chromophore, Bistabilité circuit, Interaction intermoléculaire, Transfert charge, Donneur électron, Oxadiazole, Structure chimique, Isolateur, Mémoire accès direct dynamique, Propriété physicochimique, Structure électronique, Composé transfert charge, Polymère, Oxyde d'indium, Composé conjugué, Copolymère, Amine aromatique polycyclique, Diélectrique, Matériau dopé, Circuit intégré, 8105L, 7363, 7784, 7322, ITO, 7321, 7840R, 7867.
- Wicri :
- concept : Polymère.
English descriptors
- KwdEn :
- Acceptor center, Charge transfer, Charge transfer compound, Chemical structure, Chromophore, Circuit bistability, Conjugated compound, Copolymer, Dielectric materials, Donor center, Doped materials, Dynamic random access memory, Electrical characteristic, Electrical conductivity, Electrical conductivity transitions, Electrical switching, Electron donor, Electronic structure, ITO layers, Indium oxide, Insulator, Integrated circuit, Intermolecular interaction, Memory effect, Oxadiazole, Physicochemical properties, Polycyclic aromatic amines, Polymer, Sandwich structure, Tin addition.
Abstract
Controllable bistable electrical conductivity switching behavior and resistive memory effects have been demonstrated in Al/polymer/indium-tin oxide (ITO) sandwich structure devices, constructed from non-conjugated vinyl copolymers of PTPAnOXDm with pendant donor-acceptor chromophores. The observed electrical bistability can be attributed to the field-induced intra- and intermolecular charge transfer interaction between triphenylamine electron donor (D) and oxadiazole electron acceptor (A) entities, and is highly dependent on the chemical structure of the copolymers. The vinyl copolymers showed different memory behaviors, which depended on the loading of D/A ratios. The polymers containing only donor or acceptor moieties showed as insulators, the polymers containing both donor and acceptor moieties showed as WORM, flash and DRAM as D/A ratio increased. The structural effect on the physicochemical and electronic properties of the PTPAnOXDm copolymers, viz surface morphology, thermal stability, optical absorbance and photoluminescence, and molecular orbital energy levels, were investigated systematically to study the factors that influence the memory characteristics of the devices.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural effect on controllable resistive memory switching in donor-acceptor polymer systems</title><author><name sortKey="Wang, Kun Li" uniqKey="Wang K">Kun-Li Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Engineering & Biotechnology, National Taipei University of Technology. I. Sec. 3. Chung-Hsiao E. Rd.</s1><s2>Taipei 10608</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei 10608</wicri:noRegion></affiliation></author><author><name>GANG LIU</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences #507, 519 Zhuangshi Avenue</s1><s2>Ningbo City, Zhejiang Province 315201</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo City, Zhejiang Province 315201</wicri:noRegion></affiliation></author><author><name sortKey="Chen, Po Hao" uniqKey="Chen P">Po-Hao Chen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Engineering & Biotechnology, National Taipei University of Technology. I. Sec. 3. Chung-Hsiao E. Rd.</s1><s2>Taipei 10608</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei 10608</wicri:noRegion></affiliation></author><author><name>LIANG PAN</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences #507, 519 Zhuangshi Avenue</s1><s2>Ningbo City, Zhejiang Province 315201</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo City, Zhejiang Province 315201</wicri:noRegion></affiliation></author><author><name sortKey="Tsai, Hsin Luen" uniqKey="Tsai H">Hsin-Luen Tsai</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Engineering, Kao Yuan University. 1821 Jhongshan Rd.</s1><s2>Lujhu Dist., Kaohsiung 82151</s2><s3>TWN</s3><sZ>5 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Lujhu Dist., Kaohsiung 82151</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0045746</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0045746 INIST</idno><idno type="RBID">Pascal:14-0045746</idno><idno type="wicri:Area/Main/Corpus">000178</idno><idno type="wicri:Area/Main/Repository">000038</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Charge transfer</term><term>Charge transfer compound</term><term>Chemical structure</term><term>Chromophore</term><term>Circuit bistability</term><term>Conjugated compound</term><term>Copolymer</term><term>Dielectric materials</term><term>Donor center</term><term>Doped materials</term><term>Dynamic random access memory</term><term>Electrical characteristic</term><term>Electrical conductivity</term><term>Electrical conductivity transitions</term><term>Electrical switching</term><term>Electron donor</term><term>Electronic structure</term><term>ITO layers</term><term>Indium oxide</term><term>Insulator</term><term>Integrated circuit</term><term>Intermolecular interaction</term><term>Memory effect</term><term>Oxadiazole</term><term>Physicochemical properties</term><term>Polycyclic aromatic amines</term><term>Polymer</term><term>Sandwich structure</term><term>Tin addition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transition conductivité électrique</term><term>Commutation électrique</term><term>Conductivité électrique</term><term>Caractéristique électrique</term><term>Effet mémoire</term><term>Addition étain</term><term>Couche ITO</term><term>Structure sandwich</term><term>Centre donneur</term><term>Centre accepteur</term><term>Chromophore</term><term>Bistabilité circuit</term><term>Interaction intermoléculaire</term><term>Transfert charge</term><term>Donneur électron</term><term>Oxadiazole</term><term>Structure chimique</term><term>Isolateur</term><term>Mémoire accès direct dynamique</term><term>Propriété physicochimique</term><term>Structure électronique</term><term>Composé transfert charge</term><term>Polymère</term><term>Oxyde d'indium</term><term>Composé conjugué</term><term>Copolymère</term><term>Amine aromatique polycyclique</term><term>Diélectrique</term><term>Matériau dopé</term><term>Circuit intégré</term><term>8105L</term><term>7363</term><term>7784</term><term>7322</term><term>ITO</term><term>7321</term><term>7840R</term><term>7867</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Controllable bistable electrical conductivity switching behavior and resistive memory effects have been demonstrated in Al/polymer/indium-tin oxide (ITO) sandwich structure devices, constructed from non-conjugated vinyl copolymers of PTPA<sub>n</sub>OXD<sub>m</sub> with pendant donor-acceptor chromophores. The observed electrical bistability can be attributed to the field-induced intra- and intermolecular charge transfer interaction between triphenylamine electron donor (D) and oxadiazole electron acceptor (A) entities, and is highly dependent on the chemical structure of the copolymers. The vinyl copolymers showed different memory behaviors, which depended on the loading of D/A ratios. The polymers containing only donor or acceptor moieties showed as insulators, the polymers containing both donor and acceptor moieties showed as WORM, flash and DRAM as D/A ratio increased. The structural effect on the physicochemical and electronic properties of the PTPA<sub>n</sub>OXD<sub>m</sub> copolymers, viz surface morphology, thermal stability, optical absorbance and photoluminescence, and molecular orbital energy levels, were investigated systematically to study the factors that influence the memory characteristics of the devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>15</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural effect on controllable resistive memory switching in donor-acceptor polymer systems</s1></fA08><fA11 i1="01" i2="1"><s1>WANG (Kun-Li)</s1></fA11><fA11 i1="02" i2="1"><s1>GANG LIU</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (Po-Hao)</s1></fA11><fA11 i1="04" i2="1"><s1>LIANG PAN</s1></fA11><fA11 i1="05" i2="1"><s1>TSAI (Hsin-Luen)</s1></fA11><fA14 i1="01"><s1>Department of Chemical Engineering & Biotechnology, National Taipei University of Technology. I. Sec. 3. Chung-Hsiao E. Rd.</s1><s2>Taipei 10608</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences #507, 519 Zhuangshi Avenue</s1><s2>Ningbo City, Zhejiang Province 315201</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electronic Engineering, Kao Yuan University. 1821 Jhongshan Rd.</s1><s2>Lujhu Dist., Kaohsiung 82151</s2><s3>TWN</s3><sZ>5 aut.</sZ></fA14><fA20><s1>322-336</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000501664880460</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>40 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0045746</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Controllable bistable electrical conductivity switching behavior and resistive memory effects have been demonstrated in Al/polymer/indium-tin oxide (ITO) sandwich structure devices, constructed from non-conjugated vinyl copolymers of PTPA<sub>n</sub>OXD<sub>m</sub> with pendant donor-acceptor chromophores. The observed electrical bistability can be attributed to the field-induced intra- and intermolecular charge transfer interaction between triphenylamine electron donor (D) and oxadiazole electron acceptor (A) entities, and is highly dependent on the chemical structure of the copolymers. The vinyl copolymers showed different memory behaviors, which depended on the loading of D/A ratios. The polymers containing only donor or acceptor moieties showed as insulators, the polymers containing both donor and acceptor moieties showed as WORM, flash and DRAM as D/A ratio increased. The structural effect on the physicochemical and electronic properties of the PTPA<sub>n</sub>OXD<sub>m</sub> copolymers, viz surface morphology, thermal stability, optical absorbance and photoluminescence, and molecular orbital energy levels, were investigated systematically to study the factors that influence the memory characteristics of the devices.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F06B</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A15</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Transition conductivité électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electrical conductivity transitions</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Commutation électrique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Electrical switching</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Conmutación eléctrica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Conductivité électrique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Electrical conductivity</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Conductividad eléctrica</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Effet mémoire</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Memory effect</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Efecto memoria</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Addition étain</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Tin addition</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Adición estaño</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche ITO</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>ITO layers</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Structure sandwich</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Sandwich structure</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Estructura sandwich</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Centre donneur</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Donor center</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Centro dador</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Centre accepteur</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Acceptor center</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Centro aceptor</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Chromophore</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Chromophore</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Cromóforo</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Bistabilité circuit</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Circuit bistability</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Interaction intermoléculaire</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Intermolecular interaction</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Interacción intermolecular</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Transfert charge</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Charge transfer</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Transferencia carga</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Donneur électron</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Electron donor</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Donador electrón</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxadiazole</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Oxadiazole</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Oxadiazol</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Structure chimique</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Chemical structure</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Estructura química</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Isolateur</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Insulator</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Aislador</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Mémoire accès direct dynamique</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Dynamic random access memory</s0><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Propriété physicochimique</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Physicochemical properties</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Propiedad fisicoquímica</s0><s5>20</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Structure électronique</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Electronic structure</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Estructura electrónica</s0><s5>21</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Composé transfert charge</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Charge transfer compound</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Compuesto transferencia carga</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Polymère</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Polymer</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Polímero</s0><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Indium oxide</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Indio óxido</s0><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Composé conjugué</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Conjugated compound</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Compuesto conjugado</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Copolymère</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Copolymer</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Copolímero</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Amine aromatique polycyclique</s0><s5>27</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Polycyclic aromatic amines</s0><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Diélectrique</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Dielectric materials</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Dieléctrico</s0><s5>28</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Circuit intégré</s0><s5>47</s5></fC03><fC03 i1="30" i2="X" l="ENG"><s0>Integrated circuit</s0><s5>47</s5></fC03><fC03 i1="30" i2="X" l="SPA"><s0>Circuito integrado</s0><s5>47</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>8105L</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>7363</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="33" i2="X" l="FRE"><s0>7784</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="34" i2="X" l="FRE"><s0>7322</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="35" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="36" i2="X" l="FRE"><s0>7321</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="37" i2="X" l="FRE"><s0>7840R</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="38" i2="X" l="FRE"><s0>7867</s0><s4>INC</s4><s5>85</s5></fC03><fN21><s1>055</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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